Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures

Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures

We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI) structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD) technique. Cubic SiC (3C-SiC) thin film in (111) domain was realized at relatively low substrate temperature of 750 °C. 3C-SiC energy b...

Epitaxial graphene on silicon carbide: Introduction to structured graphene

We present an introduction to the rapidly growing field of epitaxial graphene on silicon carbide, tracing its development from the original proof-of-concept experiments a decade ago to its present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now being recognized. Whether the ultimate promise of graphene-based electronics will ever be realized remain...

Field effect in epitaxial graphene on a silicon carbide substrate

Field effect in epitaxial graphene on a silicon carbide substrate Gong Gu Sarnoff Corporation, CN5300, Princeton, New Jersey 08543 Shu Nie and R. M. Feenstra Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 R. P. Devaty and W. J. Choyke Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 152650 Winston K. Chan and Michael G. K...

Superconductivity in Ca-intercalated epitaxial graphene on silicon carbide

Graphene Formation on the Carbon face of Silicon Carbide

In this thesis, we study the structure of epitaxial graphene formed on polar faces of SiC the (0001) face, also known as the Si-face, and the (0001 ) face, known as the C-face. On both polar surfaces, graphene films are prepared in ultra-high vacuum (UHV), in environments either of argon or cryogenically purified neon, or in a low-pressure background of disilane. Characterization of graphene is...